TEC010 Dynamic Analysis of Charge Separation in Metal-Insulator-Semiconductor Devices Used for High-Power Applications

Abstract

In this study, a low-potential analysis of the charge separation dynamics in the metal-insulator-semiconductor (MIS) devices used for the architecture of the power electronic circuits, systems and networks. The separation events were supposed and analyzed at the interface regions within the bulk structures of such devices. The results of the performed analysis have shown that the charge separation may have reasonable effect on the performance and efficiency of the MIS device when the operation potentials are lower than 1 kV/m. Such potential values are the basement of the MIS power electronics employed in hyperfine electronics.