PHY034 Characterization of Silicon-Based Heterojunctions Fabricated by Plasma-Induced Growth Technique

Abstract

In this work, silicon substrates were etched by plasma-induced etching technique to form nano-scale rough surfaces. These surfaces were coated with ultra-fine carbon to form layers of n-type silicon carbide by plasma-induced bonding technique. The structures and morphology of these structures were introduced. These tests confirmed the formation of nanostructured SiC layers on the etched Si substrates. Electrical characteristics showed that the formed n-SiC/p-Si anisotype heterojunction has an ideality factor of 0.45 and the built-in potential was measured to be 2.6V. This technique is reasonably efficient, low-cost and reliable to fabricate heterojunctions from nanostructured compound semiconductors on silicon substrates.